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Applied Materials Advances Ion Implant Technology for 3D Chip Architectures

Unique beam shape control coupled with SuperScan 3 technology reduces device variability, while superior particle performance boosts production yields

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By: DAVID SAVASTANO

Contributing Editor, Coatings World and Ink World, Coatings World and Ink World Magazine

Applied Materials, Inc. announced the Applied Varian VIISta 900 3D system, a state-of-the-art medium-current ion implantation tool developed for manufacturing FinFET and 3D NAND designs at sub-2x nanometer nodes. This system features innovations in precision materials engineering that deliver unprecedented levels of control needed to improve device performance, reduce variability and boost yields of increasingly complex high-performance, high density 3D devices.

The VIISta 900 3D system offers enhanced beam angle precision, breakthrough beam shape accuracy and superior dose and uniformity control that enable customers to achieve process repeatability and optimize device performance. The system’s unique hot implant technology and triple magnet architecture additionally boost yield by minimizing defects. These combined capabilities support the precision implants required for manufacturing complex 3D architectures.

“Consumer demand for enhanced mobility puts tremendous pressure on chip makers to deliver higher performance, lower power devices, which results in complex challenges,” said Gary Rosen, vice president and general manager of Applied’s Varian Semiconductor Equipment business unit. “Specifically developed for 3D designs, the VIISta 900 3D ion implantation tool helps solve our customers’ toughest device challenges by providing the purest, most precise implants available for improved device performance and yield.”

A key innovation of the VIISta 900 3D system is its SuperScan 3 technology that utilizes the tool’s unique beam shape control to support customized wafer dose patterning by delivering accurate, precise dosing for virtually any desired pattern. SuperScan 3 corrects for non-implant process variations to improve device performance and yield for 3D devices.

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